Product Details Portlet

EE-SX1350 Photomicrosensor (Transmissive)

Compact Slot / SMD Type (Slot width: 5 mm)

  • Unique 5 mm Slot width.
  • PCB surface mounting type.
  • High resolution with a 0.5-mm-wide aperture.
RoHS適合
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Absolute Maximum Ratings (Ta = 25ºC)
Item
Symbol
Rated value
Unit
Remarks
EmitterForward currentIF30mA--- *1
Pulse forward currentIFP100mADuty ratio:
1%
Puls width:
0.1 ms
Reverse voltageVR4V---
DetectorCollector-Emitter voltageVCEO12V---
Emitter-Collector voltageVECO5V---
Collector currentIC20mA---
Collector dissipationPC50mW--- *1
Operating temperatureTopr-30 to 85ºC--- *1
Storage temperatureTstg-40 to 100ºC--- *1
Reflow soldering temperatureTsol255ºC10 sec. max. *2
*1.Continuous Forward Current and Collector Power Dissipation must be derated complying. The product should be used without freezing or condensation.
*2.In case of reflow soldering, conditions which are shown at the temperature profile should be kept.

Electrical and Optical Characteristics (Ta = 25ºC)
Item
Symbol
Value
Unit
Condition
MIN.
TYP.
MAX.
EmitterForward voltageVF---1.21.5VIF = 30mA
Reverse currentIR---0.0110µAVR = 4V
Peak emission wavelengthλP---940---nmIF = 20mA
DetectorLight currentIL0.4---4mAIF = 20mA,
VCE = 10V
Dark currentID---10200nAVCE = 10V,
0×
Collector-Emitter
saturated voltage
VCE (sat)---0.10.4VIF = 20mA,
IL =0.1mA
Peak spectral
sensitivity wavelength
λP---900---nmVCE = 5V
Rising timetr---11---µsVCC = 5V,
RL = 100Ω,
IL = 1mA *
Falling timetf---14---µsVCC = 5V,
RL = 100Ω,
IL = 1mA *
*Refer to the following timing diagram for tr and tf. EE-SX1350:Characteristics1

Exterior Specifications
Connecting methodWeight (g)Material
Case
SMT0.3PPS
(Unit: mm)
Slit size (H × W)
EmitterDetector
1.4 × 1.41.4 × 0.5

Internal circuit
EESX1350:外形
Terminal No.Name
(1)Anode
(2)Not connected.
(3)Cathode
(4)Collector
(5)Not connected.
(6)Emitter
Unless otherwise specified, the tolerances are ±0.2 mm.