Product Details Portlet

EE-SY110 Photomicrosensor (Reflective)

  • Compact reflective model with a molded housing.
  • Recommended sensing distance = 5.0 mm
RoHS適合
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Absolute Maximum Ratings (Ta = 25ºC)
Item
Symbol
Rated value
Emitter Forward current IF 50 mA
(see note 1)
Pulse forward current IFP 1 A
(see note 2)
Reverse voltage VR 4 V
Detector Collector-Emitter voltage VCEO 30 V
Emitter-Collector voltage VECO ---
Collector current IC 20 mA
Collector dissipation PC 100 mW
(see note 1)
Ambient temperature Operating Topr -40ºC to 85ºC
Storage Tstg -40ºC to 85ºC
Soldering temperature Tsol 260ºC
(see note 3)
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25ºC.

2. The pulse width is 10 μs maximum with a frequency of 100 Hz.

3. Complete soldering within 10 seconds.

Electrical and Optical Characteristics (Ta = 25ºC)
Item
Symbol
Value
Condition
Emitter Forward voltage VF 1.2 V typ., 1.5 V max. IF = 30 mA
Reverse current IR 0.01 μA typ., 10 μA max. VR = 4 V
Peak emission wavelength λP 940 nm typ. IF = 20 mA
Detector Light current IL 200 μA min., 2,000 μA max. IF = 20 mA, VCE = 10 V
White paper with a reflection ratio of 90%, d = 5 mm (see note)
Dark current ID 2 nA typ., 200 nA max. VCE = 10 V, 0 x
Leakage current ILEAK 2 μA max. IF = 20 mA, VCE = 10 V with no reflection
Collector-Emitter saturated voltage VCE(sat) --- ---
Peak spectral sensitivity wavelength λP 850 nm typ. VCE = 10 V
Rising time tr 30 μs typ. VCC = 5 V, RL = 1 kΩ, IL = 1 mA
Falling time tf 30 μs typ. VCC = 5 V, RL = 1 kΩ, IL = 1 mA
Note: The letter “d” indicates the distance between the top surface of the sensor and the sensing object.
Note: All units are in millimeters unless otherwise indicated.

EE-SY110:Dimensions

Terminal No.
Name
A Anode
K Cathode
C Collector
E Emitter

Unless otherwise specified, the tolerances are as shown below.
Dimensions
Tolerance
3 mm max. ±0.2
3 < mm ≤ 6 ±0.24
6 < mm ≤ 10 ±0.29
10 < mm ≤ 18 ±0.35
18 < mm ≤ 30 ±0.42